january 2005 ? 2005 fairchild semiconductor corporation fds6673az rev c (w) fds6673az 30 volt p-channel powertrench ? mosfet general description this p-channel mosfet has been designed specifically to improve the overall efficiency of dc/dc converters using either sy nchronous or conventional switching pwm controllers, and battery chargers. these mosfets feature faster switching and lower gate charge than other mosfets with comparable r ds(on) specifications. the result is a mosfet that is easy and safer to drive (even at very high frequencies), and dc/dc power supply designs with higher overall efficiency. features ? ?14.5 a, ?30 v. r ds(on) = 7.2 m ? @ v gs = ?10 v r ds(on) = 11 m ? @ v gs = ? 4.5 v ? extended v gss range (?25v) for battery applications ? esd protection diode (note 3) ? high performance trench technology for extremely low r ds(on) ? high power and current handling capability s d s s so-8 d d d g 4 5 3 6 2 7 1 8 absolute maximum ratings t a =25 o c unless otherwise noted symbol parameter ratings units v dss drain-source voltage ?30 v v gss gate-source voltage + 25 v i d drain current ? continuous (note 1a) ?14.5 a ? pulsed ?50 power dissipation for single operation (note 1a) 2.5 (note 1b) 1.2 p d (note 1c) 1.0 w t j , t stg operating and storage junction temperature range ?55 to +175 c thermal characteristics r ja thermal resistance, junction-to-ambient (note 1a) 50 c/w r jc thermal resistance, junction-to-case (note 1) 25 c/w package marking and ordering information device marking device reel size tape width quantity fds6673az fds6673az 13?? 12mm 2500 units fds6673az
fds6673az rev c (w) electrical characteristics t a = 25c unless otherwise noted symbol parameter test conditions min typ max units off characteristics bv dss drain?source breakdown voltage v gs = 0 v, i d = ?250 a ?30 v ? bv dss ? t j breakdown voltage temperature coefficient i d = ?250 a,referenced to 25 c ?25 mv/ c i dss zero gate voltage drain current v ds = ?24 v, v gs = 0 v ?1 a i gss gate?body leakage v gs = + 20 v, v ds = 0 v + 10 a on characteristics (note 2) v gs(th) gate threshold voltage v ds = v gs , i d = ?250 a ?1 ?1.6 ?3 v ? v gs(th) ? t j gate threshold voltage temperature coefficient i d = ?250 a,referenced to 25 c 5.8 mv/ c r ds(on) static drain?source on?resistance v gs = ?10 v, i d = ?14.5 a v gs = ?4.5 v, i d = ?12 a v gs =?4.5 v, i d =?14.5a, t j =125 c 6.0 8.8 7.8 7.2 11 10.4 m ? g fs forward transconductance v ds = ?5 v, i d = ?14.5 a 50 s dynamic characteristics c iss input capacitance 4480 pf c oss output capacitance 1190 pf c rss reverse transfer capacitance v ds = ?15 v, v gs = 0 v, f = 1.0 mhz 615 pf r g gate resistance v gs = 15 mv, f = 1.0 mhz 3.8 switching characteristics (note 2) t d(on) turn?on delay time 22 35 ns t r turn?on rise time 8 16 ns t d(off) turn?off delay time 134 214 ns t f turn?off fall time v dd = ?15 v, i d = ?1 a, v gs = ?10 v, r gen = 6 ? 79 126 ns q g total gate charge 84 118 nc q gs gate?source charge 12 nc q gd gate?drain charge v ds = ?15 v, i d = ?14.5 a, v gs = ?10 v 19 nc drain?source diode characteristics and maximum ratings i s maximum continuous drain?source diode forward current ?2.1 a v sd drain?source diode forward voltage v gs = 0 v, i s = ?2.1 a (note 2) ?0.7 ?1.2 v t rr reverse recovery time 44 ns q rr reverse recovery charge i f = ?14.5 a, d if /d t = 100 a/s (note 2) 29 nc notes: 1. r ja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the so lder mounting surface of the drain pins. r jc is guaranteed by design while r ca is determined by the user's board design. a) 50c/w (10 sec) 62.5c/w steady state when mounted on a 1in 2 pad of 2 oz copper b) 105c/w when mounted on a .04 in 2 pad of 2 oz copper c) 125c/w when mounted on a minimum pad. scale 1 : 1 on letter size paper 2. pulse test: pulse width < 300 s, duty cycle < 2.0% 3. the diode connected between the gate and source serves only as protection against esd. no gate overvoltage rating is implied. fds6673az
fds6673az rev c (w) typical characteristics 0 20 40 60 80 00.511.52 -v ds , drain to source voltage (v) -i d , drain current (a) v gs = -10v -3.0v -3.5v -6.0v -4.5v -4.0v 0.6 1 1.4 1.8 2.2 2.6 3 3.4 3.8 0 20406080 -i d , drain current (a) r ds(on) , normalized drain-source on-resistance v gs = - 3.0v -6.0v -4.5v -10v -5.0v -4.0v -3.5v figure 1. on-region characteristics. fi gure 2. on-resistance variation with drain current and gate voltage. 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5 1.6 1.7 -50 -25 0 25 50 75 100 125 150 175 t j , junction temperature ( o c) r ds(on) , normalized drain-source on-resistance i d = -14.5a v gs = -10v 0.00 0.01 0.01 0.02 0.02 0.02 246810 -v gs , gate to source voltage (v) r ds(on) , on-resistance (ohm) i d = -7.3a t a = 125 o c t a = 25 o c figure 3. on-resistance variation with temperature. figure 4. on-resistance variation with gate-to-source voltage. 0 20 40 60 80 1.5 2 2.5 3 3.5 4 -v gs , gate to source voltage (v) -i d , drain current (a) t a = -55 o c 25 o c 125 o c v ds = -5v 0.001 0.01 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 1.2 -v sd , body diode forward voltage (v) -i s , reverse drain current (a) v gs = 0v t a = 125 o c 25 o c -55 o c figure 5. transfer characteristics. figure 6. body diode forward voltage variation with source current and temperature. fds6673az
fds6673az rev c (w) typical characteristics 0 2 4 6 8 10 0 102030405060708090 q g , gate charge (nc) -v gs , gate-source voltage (v) i d = -14.5a v ds = -10v -15v -20v 0 1000 2000 3000 4000 5000 6000 0 5 10 15 20 25 30 -v ds , drain to source voltage (v) capacitance (pf) c iss c oss c rss f = 1 mhz v gs = 0 v figure 7. gate charge characteristics. figure 8. capacitance characteristics. 0.01 0.1 1 10 100 0.01 0.1 1 10 100 -v ds , drain-source voltage (v) -i d , drain current (a) dc 1s 100ms 100 s r ds(on) limit v gs = -10v single pulse r ja = 125 o c/w t a = 25 o c 10ms 1ms 10s 0 10 20 30 40 50 0.001 0.01 0.1 1 10 100 1000 t 1 , time (sec) p(pk), peak transient power (w) single pulse r ja = 125c/w t a = 25c figure 9. maximum safe operating ar ea. figure 10. single pulse maximum power dissipation. 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t 1 , time (sec) r(t), normalized effective transient thermal resistance r ja (t) = r(t) * r ja r ja = 125 o c/w t j - t a = p * r ja (t) duty cycle, d = t 1 / t 2 p (p k ) t 1 t 2 single pulse 0.01 0.02 0.05 0.1 0.2 d = 0.5 figure 11. transient thermal response curve. thermal characterization perf ormed using the conditions described in note 1c. transient thermal response will change depending on the circuit board design. fds6673az
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